Emilio Scalise: 1 book
Vibrational Properties of Defective Oxides and 2D Nanolattices
Insights from First-Principles Simulations
Language: English
Release Date: May 28, 2014
Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.
This thesis is devoted to the first-principles modeling of the vibrational...
