GaP Heteroepitaxy on Si(100)

Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients

Nonfiction, Science & Nature, Technology, Lasers, Electronics, Semiconductors
Cover of the book GaP Heteroepitaxy on Si(100) by Henning Döscher, Springer International Publishing
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: Henning Döscher ISBN: 9783319028804
Publisher: Springer International Publishing Publication: November 29, 2013
Imprint: Springer Language: English
Author: Henning Döscher
ISBN: 9783319028804
Publisher: Springer International Publishing
Publication: November 29, 2013
Imprint: Springer
Language: English

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

More books from Springer International Publishing

Cover of the book Intimacy and Celebrity in Eighteenth-Century Literary Culture by Henning Döscher
Cover of the book CMS Pixel Detector Upgrade and Top Quark Pole Mass Determination by Henning Döscher
Cover of the book Computational Methods in Systems Biology by Henning Döscher
Cover of the book Structural, Syntactic, and Statistical Pattern Recognition by Henning Döscher
Cover of the book Musculoskeletal Research and Basic Science by Henning Döscher
Cover of the book Limits to Climate Change Adaptation by Henning Döscher
Cover of the book Queenship, Gender, and Reputation in the Medieval and Early Modern West, 1060-1600 by Henning Döscher
Cover of the book Order Ethics: An Ethical Framework for the Social Market Economy by Henning Döscher
Cover of the book Mobile Networks and Management by Henning Döscher
Cover of the book Guide to Cisco Routers Configuration by Henning Döscher
Cover of the book Virtual Reality and Augmented Reality by Henning Döscher
Cover of the book Learning and Teaching Real World Problem Solving in School Mathematics by Henning Döscher
Cover of the book Understanding Policy Decisions by Henning Döscher
Cover of the book Pursuing Excellence in Mathematics Education by Henning Döscher
Cover of the book Lasers with Nuclear Pumping by Henning Döscher
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy