Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

Nonfiction, Science & Nature, Technology, Nanotechnology, Science, Chemistry, Physical & Theoretical
Cover of the book Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations by Rui-Qin Zhang, Springer Berlin Heidelberg
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Author: Rui-Qin Zhang ISBN: 9783642409059
Publisher: Springer Berlin Heidelberg Publication: November 22, 2013
Imprint: Springer Language: English
Author: Rui-Qin Zhang
ISBN: 9783642409059
Publisher: Springer Berlin Heidelberg
Publication: November 22, 2013
Imprint: Springer
Language: English

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

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In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

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