MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Nonfiction, Science & Nature, Technology, Electronics, Circuits, Telecommunications
Cover of the book MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by Viranjay M. Srivastava, Ghanshyam Singh, Springer International Publishing
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Author: Viranjay M. Srivastava, Ghanshyam Singh ISBN: 9783319011653
Publisher: Springer International Publishing Publication: October 7, 2013
Imprint: Springer Language: English
Author: Viranjay M. Srivastava, Ghanshyam Singh
ISBN: 9783319011653
Publisher: Springer International Publishing
Publication: October 7, 2013
Imprint: Springer
Language: English

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

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This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

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