Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nonfiction, Science & Nature, Technology, Electronics, Microelectronics, Computers, Advanced Computing, Information Technology, Science, Physics, General Physics
Cover of the book Nitride Wide Bandgap Semiconductor Material and Electronic Devices by Yue Hao, Jin Feng Zhang, Jin Cheng Zhang, CRC Press
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Author: Yue Hao, Jin Feng Zhang, Jin Cheng Zhang ISBN: 9781315351834
Publisher: CRC Press Publication: November 3, 2016
Imprint: CRC Press Language: English
Author: Yue Hao, Jin Feng Zhang, Jin Cheng Zhang
ISBN: 9781315351834
Publisher: CRC Press
Publication: November 3, 2016
Imprint: CRC Press
Language: English

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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