Scaling and Integration of High Speed Electronics and Optomechanical Systems

Nonfiction, Science & Nature, Technology, Electronics, Optoelectronics, Microelectronics
Cover of the book Scaling and Integration of High Speed Electronics and Optomechanical Systems by Magnus Willander, Håkan Pettersson, World Scientific Publishing Company
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Author: Magnus Willander, Håkan Pettersson ISBN: 9789813225411
Publisher: World Scientific Publishing Company Publication: April 17, 2017
Imprint: WSPC Language: English
Author: Magnus Willander, Håkan Pettersson
ISBN: 9789813225411
Publisher: World Scientific Publishing Company
Publication: April 17, 2017
Imprint: WSPC
Language: English

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.

In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

Contents:

  • Preface
  • Scaling Challenges for Advanced CMOS Devices (Ajey P Jacob, Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T P Lee and Bill Taylor)
  • High-Speed SiGe BiCMOS Technologies and Circuits (A Mai, I Garcia Lopez, P Rito, R Nagulapalli, A Awny, M Elkhouly, M Eissa, M Ko, A Malignaggi, M Kucharski, H J Ng, K Schmalz and D Kissinger)
  • Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs (Henry H Radamson, Jun Luo, Changliang Qin, Huaxiang Yin, Huilong Zhu, Chao Zhao and Guilei Wang)
  • Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks (Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S Shur, Georgy Fedorov and Vladimir Leiman)
  • Integrated On-Chip Nano-Optomechanical Systems (Zhu Diao, Vincent T K Sauer and Wayne K Hiebert)
  • Author Index

Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.
Key Features:

  • This book includes a comprehensive review on latest innovations regarding devices and integration challenges in the CMOS industry
  • The book presented the scaling challenges for CMOS from an industrial point of view, SiGe BiCMOS technologies, circuits for mm-wave and THz applications and process technologies for the 14 nm node and beyond
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.

In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.

Contents:

Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.
Key Features:

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