Strain-Induced Effects in Advanced MOSFETs

Nonfiction, Science & Nature, Technology, Electronics
Cover of the book Strain-Induced Effects in Advanced MOSFETs by Viktor Sverdlov, Springer Vienna
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Author: Viktor Sverdlov ISBN: 9783709103821
Publisher: Springer Vienna Publication: January 6, 2011
Imprint: Springer Language: English
Author: Viktor Sverdlov
ISBN: 9783709103821
Publisher: Springer Vienna
Publication: January 6, 2011
Imprint: Springer
Language: English

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

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