The Thermoballistic Transport Model

A Novel Approach to Charge Carrier Transport in Semiconductors

Nonfiction, Science & Nature, Technology, Electronics, Semiconductors, Science, Physics, Solid State Physics
Cover of the book The Thermoballistic Transport Model by Reinhard Lipperheide, Uwe Wille, Springer International Publishing
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Author: Reinhard Lipperheide, Uwe Wille ISBN: 9783319059242
Publisher: Springer International Publishing Publication: May 9, 2014
Imprint: Springer Language: English
Author: Reinhard Lipperheide, Uwe Wille
ISBN: 9783319059242
Publisher: Springer International Publishing
Publication: May 9, 2014
Imprint: Springer
Language: English

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

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The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

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