Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Nonfiction, Science & Nature, Technology, Material Science, Electronics, Circuits
Cover of the book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by , Springer International Publishing
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: ISBN: 9783319779942
Publisher: Springer International Publishing Publication: May 12, 2018
Imprint: Springer Language: English
Author:
ISBN: 9783319779942
Publisher: Springer International Publishing
Publication: May 12, 2018
Imprint: Springer
Language: English

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;

  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;

  • Enables design of smaller, cheaper and more efficient power supplies.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

More books from Springer International Publishing

Cover of the book Large-Scale Visual Geo-Localization by
Cover of the book Explorations into Chinese as a Second Language by
Cover of the book Heat Shock Protein Inhibitors by
Cover of the book Microbe-Induced Degradation of Pesticides by
Cover of the book Essential Echocardiography by
Cover of the book Mobile Networks and Management by
Cover of the book DNA Computing and Molecular Programming by
Cover of the book Computer and Communication Engineering by
Cover of the book Photonic Materials for Sensing, Biosensing and Display Devices by
Cover of the book Eco-Factories of the Future by
Cover of the book Molecular Therapies of Cancer by
Cover of the book Bioarchaeology of Women and Children in Times of War by
Cover of the book Offshore Service Industry and Logistics Modeling in the Gulf of Mexico by
Cover of the book Chemokines by
Cover of the book The Philosophical Thought of Wang Chong by
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy