Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Nonfiction, Science & Nature, Technology, Material Science, Electronics, Circuits
Cover of the book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by , Springer International Publishing
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Author: ISBN: 9783319779942
Publisher: Springer International Publishing Publication: May 12, 2018
Imprint: Springer Language: English
Author:
ISBN: 9783319779942
Publisher: Springer International Publishing
Publication: May 12, 2018
Imprint: Springer
Language: English

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;

  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;

  • Enables design of smaller, cheaper and more efficient power supplies.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

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