Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Nonfiction, Science & Nature, Technology, Material Science, Electronics, Circuits
Cover of the book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by , Springer International Publishing
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: ISBN: 9783319779942
Publisher: Springer International Publishing Publication: May 12, 2018
Imprint: Springer Language: English
Author:
ISBN: 9783319779942
Publisher: Springer International Publishing
Publication: May 12, 2018
Imprint: Springer
Language: English

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;

  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;

  • Enables design of smaller, cheaper and more efficient power supplies.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

More books from Springer International Publishing

Cover of the book Service Orientation in Holonic and Multi-Agent Manufacturing by
Cover of the book Science Fiction, Ethics and the Human Condition by
Cover of the book Computational Photonic Sensors by
Cover of the book Storm Water Management by
Cover of the book Gender, Family, and Adaptation of Migrants in Europe by
Cover of the book Building the Impact Economy by
Cover of the book Advances in Nanomaterials by
Cover of the book Neuroimaging: Anatomy Meets Function by
Cover of the book The Demons of Science by
Cover of the book A Finite Element Primer for Beginners by
Cover of the book Biochemistry and Molecular Biology by
Cover of the book Applications in Electronics Pervading Industry, Environment and Society by
Cover of the book An Economic Analysis of the Rise and Decline of Chinese Township and Village Enterprises by
Cover of the book Information and Communication Technology for Development for Africa by
Cover of the book Biotechnology and Conservation of Cultural Heritage by
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy