Research on the Radiation Effects and Compact Model of SiGe HBT

Nonfiction, Science & Nature, Technology, Electronics, Semiconductors
Cover of the book Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun, Springer Singapore
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Author: Yabin Sun ISBN: 9789811046124
Publisher: Springer Singapore Publication: October 24, 2017
Imprint: Springer Language: English
Author: Yabin Sun
ISBN: 9789811046124
Publisher: Springer Singapore
Publication: October 24, 2017
Imprint: Springer
Language: English

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

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